| PART |
Description |
Maker |
| SMF-06020 |
Power Optimized GaAs FET
|
SAMSUNG[Samsung semiconductor]
|
| MGF0906 MGF0906B 0906B |
LS BAND POWER GaAs FET
L /S BAND POWER GaAs FET
From old datasheet system
L,S BAND POWER GaAs FET
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| CFK2062-P1 |
800 to 900 MHz 30 dBm Power GaAs FET UHF BAND, GaAs, N-CHANNEL, RF POWER, JFET
|
Mimix Broadband, Inc.
|
| MGA-412P8-TR1G MGA-412P8-BLKG MGA-412P8-TR2G |
GaAs Enhancement-mode pHEMT Power Amplifier optimized for IEEE 802.11b/g applications
|
Avago Technologies Ltd.
|
| FLL1200IU-2 |
L-Band Medium & High Power GaAs FET L BAND, GaAs, N-CHANNEL, RF POWER, JFET
L-Band Medium & High Power GaAs FET
|
Fujitsu Component Limited.
Fujitsu, Ltd.
Fujitsu Limited
|
| CF739 Q62702-F1215 |
From old datasheet system
GaAs FET (N-channel dual-gate GaAs MES FET)
|
Siemens Semiconductor G...
Siemens Semiconductor Group
Infineon
SIEMENS AG
|
| TIM1414-5-252 |
POWER GAAS FET
|
Toshiba Semiconductor
|
| TIM0910-8 |
MICROWAVE POWER GaAS FET
|
TOSHIBA[Toshiba Semiconductor]
|
| MGF2407A1 MGF2407A |
MICROWAVE POWER GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MGF2430A1 MGF2430A |
MICROWAVE POWER GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
